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High-power CMUTs: Design and experimental verification

机译:大功率CMUT:设计和实验验证

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摘要

Capacitive micromachined ultrasonic transducers (CMUTs) have great potential to compete with piezoelectric transducers in high-power applications. As the output pressures increase, nonlinearity of CMUT must be reconsidered and optimization is required to reduce harmonic distortions. In this paper, we describe a design approach in which uncollapsed CMUT array elements are sized so as to operate at the maximum radiation impedance and have gap heights such that the generated electrostatic force can sustain a plate displacement with full swing at the given drive amplitude. The proposed design enables high output pressures and low harmonic distortions at the output. An equivalent circuit model of the array is used that accurately simulates the uncollapsed mode of operation. The model facilities the design of CMUT parameters for high-pressure output, without the intensive need for computationally involved FEM tools. The optimized design requires a relatively thick plate compared with a conventional CMUT plate. Thus, we used a silicon wafer as the CMUT plate. The fabrication process involves an anodic bonding process for bonding the silicon plate with the glass substrate. To eliminate the bias voltage, which may cause charging problems, the CMUT array is driven with large continuous wave signals at half of the resonant frequency. The fabricated arrays are tested in an oil tank by applying a 125-V peak 5-cycle burst sinusoidal signal at 1.44 MHz. The applied voltage is increased until the plate is about to touch the bottom electrode to get the maximum peak displacement. The observed pressure is about 1.8 MPa with -28 dBc second harmonic at the surface of the array. © 2012 IEEE.
机译:电容式微加工超声换能器(CMUT)具有在大功率应用中与压电换能器竞争的巨大潜力。随着输出压力的增加,必须重新考虑CMUT的非线性,并且需要进行优化以减少谐波失真。在本文中,我们描述了一种设计方法,在该设计方法中,未折叠的CMUT阵列元件的尺寸应设置为可在最大辐射阻抗下工作,并具有一定的间隙高度,以便所产生的静电力可以在给定的驱动振幅下以全摆幅维持板位移。提出的设计可实现高输出压力和低谐波失真。使用了阵列的等效电路模型,可以精确地模拟未塌陷的操作模式。该模型简化了用于高压输出的CMUT参数的设计,而无需大量涉及计算的FEM工具。与常规CMUT板相比,优化设计需要相对较厚的板。因此,我们使用硅晶片作为CMUT板。该制造工艺包括用于将硅板与玻璃基板接合的阳极接合工艺。为了消除可能引起充电问题的偏置电压,CMUT阵列由谐振频率一半的大连续波信号驱动。通过在1.44 MHz上施加125V峰值5周期突发正弦信号在油箱中测试制成的阵列。施加的电压会增加,直到极板即将接触底部电极以达到最大峰值位移为止。在阵列表面观察到的压力约为1.8 MPa,二次谐波为-28 dBc。 ©2012 IEEE。

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